An intrinsic semiconductor crystal is a pure form of material, such as silicon or germanium, that contains no intentional impurities. Its electrical properties are determined solely by the natural behavior of its atoms.

At room temperature, a small number of electrons gain enough energy to move from the valence band to the conduction band, leaving behind holes.

In this state, both electrons and holes exist in equal numbers and act as charge carriers.

Because the carrier concentration is relatively low, the conductivity of an intrinsic semiconductor is modest and highly dependent on temperature.

Intrinsic crystals serve as the baseline material from which semiconductor devices are engineered.

An extrinsic semiconductor crystal, on the other hand, is formed when a pure semiconductor is deliberately doped with small amounts of specific impurities to alter its electrical behavior.

If donor atoms such as phosphorus or arsenic are added, the crystal becomes an n‑type semiconductor, where electrons are the majority carriers.

If acceptor atoms such as boron are introduced, the crystal becomes a p‑type semiconductor, where holes dominate conduction.

This controlled doping process dramatically increases the carrier concentration compared to intrinsic material, making extrinsic semiconductors far more conductive and versatile.

Extrinsic crystals are the foundation of practical electronic components such as diodes, transistors, and integrated circuits, enabling modern computing and communication technologies.

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