Forward bias is the electrical condition applied to a semiconductor diode to allow significant current to flow through it.

This is achieved by connecting an external voltage source across the diode with the correct polarity: the positive terminal of the battery is connected to the diode’s P-type semiconductor (the anode), and the negative terminal is connected to the N-type semiconductor (the cathode).

This applied voltage works to overcome the diode’s inherent potential barrier, also known as the “knee voltage” or “cut-in voltage” (typically around 0.3V for germanium and 0.7V for silicon).

When the applied forward voltage exceeds this threshold, it reduces the internal electric field at the PN junction, enabling charge carriers (electrons and holes) to easily diffuse across the junction.

This action dramatically decreases the diode’s electrical resistance, “closing” the circuit and permitting a substantial forward current to flow. In essence, forward bias is the “on” state of a diode, where it acts like a closed switch with a small voltage drop, allowing current to pass freely in one direction, which is the fundamental property that enables its use in rectification and various electronic circuit functions.

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