Wise and Navitas Target GaN and SiC Power for AI Data Centers

Wise Integration and Navitas Semiconductor GaN and SiC AI data center power supply technology

Wise Integration and Navitas Semiconductor have agreed to combine digital power control with gallium-nitride and silicon-carbide semiconductors for next-generation AI computing and data-center power systems.

The Sept. 25 collaboration will focus on AI data-center power supply units and other high-voltage, high-power conversion topologies stretching from the electrical grid to compute silicon.

Digital control meets GaN and SiC

Wise Integration brings WiseWare, its distributed digital-control technology for power converters. Navitas contributes GaNFast gallium-nitride and GeneSiC silicon-carbide devices. The companies say combining those technologies can improve conversion efficiency, power density and real-time control.

The embedded English-language video is published by Navitas Semiconductor and discusses how GaN and SiC power technology applies to AI chips and data-center infrastructure.

Why AI server PSUs are changing

AI accelerators are increasing rack power density, putting pressure on traditional silicon conversion stages. Wide-bandgap devices can switch at higher frequencies and tolerate higher voltages, potentially reducing passive-component size while increasing power density.

Wise and Navitas plan to explore those characteristics alongside digital control that can adjust power-conversion behavior in real time. Their target applications include AI data-center PSUs, AI PCs, high-end workstations, gaming desktops and industrial computing systems.

Grid-to-chip becomes a semiconductor problem

The collaboration reflects a larger architectural shift. As AI facilities move toward megawatt-scale racks and higher-voltage distribution, the path between utility electricity and GPUs increasingly depends on specialized power semiconductors, digital controllers and high-density PSUs.

Navitas is already developing GaN and SiC technology for emerging 800 VDC AI infrastructure. Its previously demonstrated 800 V-to-6 V board uses 650 V GaN devices and is designed to remove the traditional 48 V intermediate conversion stage inside server trays.

BitcoinVersus.tech has recently tracked this grid-to-chip transition through ABB’s 800 VDC AI power system, Vertiv’s 2.3 MW AI cooling infrastructure and Huawei’s Atlas 960E optical-power architecture.

Sources: Wise Integration and Navitas Semiconductor.


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3 responses to “Wise and Navitas Target GaN and SiC Power for AI Data Centers”

  1. […] The announcement complements BitcoinVersus.tech coverage of Marvell’s 2 nm optical networking, NetApp’s planned PEAK:AIO acquisition and Wise and Navitas’ GaN and SiC AI power collaboration. […]

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  2. […] has been following the same shift toward higher-density power delivery, including GaN and SiC power systems for AI data centers and 800 VDC source-to-rack […]

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  3. […] combination makes the story as much about GaN power semiconductors as traditional electrical infrastructure. It also parallels onsemi’s work on denser AI-rack […]

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