Renesas has launched its first family of 100V enhancement-mode GaN power transistors, targeting AI servers, humanoid robots, factory automation and industrial motor drives. The October 6 release expands the company’s GaN portfolio into lower-voltage power stages where switching speed, efficiency and compact size matter most.

The four new REXGaN devices span roughly 5 mΩ down to 1.2 mΩ RDS(on). Renesas says they deliver up to 35% lower hard-switching figure of merit and up to 63% lower soft-switching figure of merit than comparable GaN devices. Its technical page says the platform can cut switching losses by as much as 70% and double power density versus conventional silicon MOSFETs in some designs.

A same-day component-engineering discussion summarizes the new 100V GaN family. The Reddit post is community commentary, not primary evidence.

EPC demonstrates why low-voltage GaN is useful in humanoid robot joints, drones and compact motor drives.

Renesas’ official release and low-voltage GaN technical page position the parts for both AI data-center conversion stages and robot motor control. Electropages independently reported the same launch and specifications.

The story connects directly to BitcoinVersus.Tech’s coverage of 1200V vertical GaN, physical-AI power hardware, and 800V-to-6V AI-rack conversion. The performance figures remain manufacturer claims until independently validated in production systems.

BitcoinVersus.Tech Editor’s Note:
We volunteer daily to ensure the credibility of the information on this platform is Verifiably True. If you would like to support to help further secure the integrity of our research initiatives, please donate using the QR code provided

For best QR-code scanning results, please scan this donation code from a desktop or larger screen. Mobile screens may prevent camera recognition.